HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 13 of 13
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleAsubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, TamotsuControlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation-Journal of Applied Physics-28-Mar-2021
articleHashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, ZenjiState of the art on gate insulation and surface passivation for GaN-based power HEMTs-Materials science in semiconductor processing-May-2018
articleKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, TamotsuHighly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates-Applied physics letters-18-Oct-2016
articleYatabe, Zenji; Asubar, Joel T; Hashizume, TamotsuInsulated gate and surface passivation structures for GaN-based power transistors-Journal of Physics D: Applied Physics-7-Sep-2016
article (author version)Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching-Japanese Journal of Applied Physics (JJAP)-Apr-2016
article (author version)Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, SoichiroLarge photocurrents in GaN porous structures with a redshift of the photoabsorption edge-Semiconductor science and technology-Jan-2016
article (author version)Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, TamotsuInterface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Physica status solidi A applications and materials science-May-2015
article (author version)Yatabe, Zenji; Muramatsu, Toru; Asubar, Joel T.; Kasai, SeiyaCalculating relaxation time distribution function from power spectrum based on inverse integral transformation method-Physics Letters A-20-Mar-2015
articleWatanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode-ECS Electrochemistry Letters-14-Mar-2015
articleKumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, TaketomoCorrelation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching-Journal of the Electrochemical Society-6-Aug-2014
articleAsubar, Joel T.; Yatabe, Zenji; Hashizume, TamotsuReduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors-Applied Physics Letters-4-Aug-2014
article (author version)Kumazaki, Yusuke; Kudo, Tomohito; Yatabe, Zenji; Sato, TaketomoInvestigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices-Applied Surface Science-15-Aug-2013
article (author version)Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji; Sato, TaketomoLarge photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure-Thin Solid Films-30-Jun-2012
Showing results 1 to 13 of 13


Hokkaido University