|
Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 13 of 13
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Asubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, Tamotsu | Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | - | Journal of Applied Physics | - | 28-Mar-2021 |
article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
article | Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates | - | Applied physics letters | - | 18-Oct-2016 |
article | Yatabe, Zenji; Asubar, Joel T; Hashizume, Tamotsu | Insulated gate and surface passivation structures for GaN-based power transistors | - | Journal of Physics D: Applied Physics | - | 7-Sep-2016 |
article (author version) | Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching | - | Japanese Journal of Applied Physics (JJAP) | - | Apr-2016 |
article (author version) | Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, Soichiro | Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge | - | Semiconductor science and technology | - | Jan-2016 |
article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
article (author version) | Yatabe, Zenji; Muramatsu, Toru; Asubar, Joel T.; Kasai, Seiya | Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method | - | Physics Letters A | - | 20-Mar-2015 |
article | Watanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode | - | ECS Electrochemistry Letters | - | 14-Mar-2015 |
article | Kumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, Taketomo | Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching | - | Journal of the Electrochemical Society | - | 6-Aug-2014 |
article | Asubar, Joel T.; Yatabe, Zenji; Hashizume, Tamotsu | Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors | - | Applied Physics Letters | - | 4-Aug-2014 |
article (author version) | Kumazaki, Yusuke; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices | - | Applied Surface Science | - | 15-Aug-2013 |
article (author version) | Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure | - | Thin Solid Films | - | 30-Jun-2012 |
Showing results 1 to 13 of 13
|