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Hokkaido University Collection of Scholarly and Academic Papers
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article
Yoshida, Toshiyuki
;
Hashizume, Tamotsu
Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
-
Applied Physics Letters
-
17-Sep-2012
theses (doctoral)
Yoshida, Toshiyuki
Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Clean and Passivated Silicon Surfaces
超高真空対応非接触容量 : 電圧法によるシリコンの清浄表面と不活性化表面の評価
-
-
23-Mar-2001
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