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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleYoshida, Toshiyuki; Hashizume, TamotsuStudies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method-Applied Physics Letters-17-Sep-2012
theses (doctoral)Yoshida, ToshiyukiUltrahigh Vacuum Contactless Capacitance-Voltage Characterization of Clean and Passivated Silicon Surfaces超高真空対応非接触容量 : 電圧法によるシリコンの清浄表面と不活性化表面の評価--23-Mar-2001
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