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Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier

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タイトル: Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
著者: Marukame, Takao 著作を一覧する
Ishikawa, Takayuki 著作を一覧する
Matsuda, Ken-ichi 著作を一覧する
Uemura, Tetsuya 著作を一覧する
Yamamoto, Masafumi 著作を一覧する
発行日: 2006年 4月15日
出版者: American Institute of Physics
誌名: Journal of applied physics
巻: 99
号: 8
開始ページ: 08A904-1
終了ページ: 08A904-3
出版社 DOI: 10.1063/1.2167063
抄録: We fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co2MnGe (CMG) thin film as a lower electrode, an MgO tunnel barrier, and a Co50Fe50 upper electrode and investigated their tunnel magnetoresistance (TMR) characteristics. The microfabricated MTJs showed strongly temperature-dependent TMR characteristics with typical TMR ratios of 70% at 7 K and 14% at room temperature (RT). Furthermore, the TMR characteristics exhibited the following notable features in the bias voltage (V) dependence: (1) a cusplike V dependence within a range of similar to +/- 200 mV around V=0 at 7 K, which was smeared out at RT, and (2) a V dependence with pronounced asymmetry regarding the polarity, showing negative TMR ratios in a certain negative bias voltage range around -400 mV at both 7 K and RT (V was defined with respect to the lower CMG electrode). A possible transport mechanism leading to the notably asymmetric V dependence along with the negative TMR for a certain bias voltage region is direct tunneling that reflects the spin-dependent density of states of the CMG electrode.
Rights: (C) 2006 American Institute of Physics.
関連URI: http://jap.aip.org/jap/top.jsp
資料タイプ: article
URI: http://hdl.handle.net/2115/13458
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 丸亀 孝生

 

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