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Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/14593

Title: Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
Authors: Sato, Taketomo Browse this author →KAKEN DB
Kasai, Seiya Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author
Keywords: Nanometer-sized Schottky contact
GaAs
InP
I–V characteristics
C–V characteristics
Electrochemical process
Issue Date: 2001
Publisher: Elsevier Science B.V.
Journal Title: Applied Surface Science
Volume: 175-176
Issue: 1-2
Start Page: 181
End Page: 186
Publisher DOI: 10.1016/S0169-4332(01)00059-9
Abstract: The electrical properties of nanometer-sized Schottky contacts which were successfully formed on n-GaAs and n-InP substrates by a combination of an electrochemical process and an electron-beam (EB) lithography, were characterized both experimentally and theoretically. The detailed I–V measurements using a conductive AFM system showed nonlinear log I–V characteristics with large n value in range of 1.2–2.0 which cannot be explained by a standard 1D thermionic emission model. A computer simulation showed that this nonlinear characteristics can be explained by a new 3D thermionic emission model where Fermi-level pinning on the surrounding free surface modifies the potential distribution underneath the nano-contact. Calculation of C–V characteristics showed an extremely small change of the depletion layer width with bias due to the environmental Fermi-level pinning. On the other hand, it was also found that Fermi-level pinning at the metal–semiconductor interface itself is greatly reduced, resulting in a strong dependence of barrier height on the metal workfunction.
Relation: http://www.sciencedirect.com/science/journal/01694332
Type: article (author version)
URI: http://hdl.handle.net/2115/14593
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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