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Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
| Title: | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process |
| Authors: | Sato, Taketomo Browse this author →KAKEN DB | | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | Nanometer-sized Schottky contact | | GaAs | | InP | | I–V characteristics | | C–V characteristics | | Electrochemical process |
| Issue Date: | 2001 |
| Publisher: | Elsevier Science B.V. |
| Journal Title: | Applied Surface Science |
| Volume: | 175-176 |
| Issue: | 1-2 |
| Start Page: | 181 |
| End Page: | 186 |
| Publisher DOI: | 10.1016/S0169-4332(01)00059-9 |
| Abstract: | The electrical properties of nanometer-sized Schottky contacts which were successfully formed on n-GaAs and n-InP substrates by a combination of an electrochemical process and an electron-beam (EB) lithography, were characterized both experimentally and theoretically. The detailed I–V measurements using a conductive AFM system showed nonlinear log I–V characteristics with large n value in range of 1.2–2.0 which cannot be explained by a standard 1D thermionic emission model. A computer simulation showed that this nonlinear characteristics can be explained by a new 3D thermionic emission model where Fermi-level pinning on the surrounding free surface modifies the potential distribution underneath the nano-contact. Calculation of C–V characteristics showed an extremely small change of the depletion layer width with bias due to the environmental Fermi-level pinning. On the other hand, it was also found that Fermi-level pinning at the metal–semiconductor interface itself is greatly reduced, resulting in a strong dependence of barrier height on the metal workfunction. |
| Relation: | http://www.sciencedirect.com/science/journal/01694332 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/14593 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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