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Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
Title: | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs |
Authors: | Kameda, Atsushi Browse this author | Kasai, Seiya Browse this author →KAKEN DB | Sato, Taketomo Browse this author | Hasegawa, Hideki Browse this author |
Issue Date: | Feb-2003 |
Publisher: | Elsevier Science Ltd. |
Journal Title: | Solid-State Electronics |
Volume: | 47 |
Issue: | 2 |
Start Page: | 323 |
End Page: | 331 |
Publisher DOI: | 10.1016/S0038-1101(02)00214-9 |
Abstract: | Effects of surface states on gate control characteristics of nano-meter scale Schottky gates formed on GaAs are investigated both theoretically and experimentally. Special sample structures are used. They are metal–insulator–semi-conductor structures having nano-meter scale Schottky dot arrays for capacitance–voltage (C–V) measurements and metal–semi-conductor field effect transistor structures having nano-meter scale grating Schottky gates for current–voltage (I–V) measurements. Measured C–V and I–V results are compared with results of theoretical calculation on a computer.
The effects of surface states are found to be two-fold. Namely, it is shown that control characteristics of nano-meter scale Schottky gates are strongly degraded by the presence of Fermi level pinning caused by surface states on the free surface surrounding the gate. It is also shown that a significant amount of gate-induced lateral charging of surface states takes place around the gate periphery, effectively increasing the gate dimension. These results indicate the critical importance of control of surface states in nano-devices using nano-meter scale Schottky gates. |
Relation: | http://www.sciencedirect.com/science/journal/00381101 |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/14594 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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