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Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs

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Title: Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
Authors: Kameda, Atsushi Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Sato, Taketomo Browse this author
Hasegawa, Hideki Browse this author
Issue Date: Feb-2003
Publisher: Elsevier Science Ltd.
Journal Title: Solid-State Electronics
Volume: 47
Issue: 2
Start Page: 323
End Page: 331
Publisher DOI: 10.1016/S0038-1101(02)00214-9
Abstract: Effects of surface states on gate control characteristics of nano-meter scale Schottky gates formed on GaAs are investigated both theoretically and experimentally. Special sample structures are used. They are metal–insulator–semi-conductor structures having nano-meter scale Schottky dot arrays for capacitance–voltage (C–V) measurements and metal–semi-conductor field effect transistor structures having nano-meter scale grating Schottky gates for current–voltage (I–V) measurements. Measured C–V and I–V results are compared with results of theoretical calculation on a computer. The effects of surface states are found to be two-fold. Namely, it is shown that control characteristics of nano-meter scale Schottky gates are strongly degraded by the presence of Fermi level pinning caused by surface states on the free surface surrounding the gate. It is also shown that a significant amount of gate-induced lateral charging of surface states takes place around the gate periphery, effectively increasing the gate dimension. These results indicate the critical importance of control of surface states in nano-devices using nano-meter scale Schottky gates.
Relation: http://www.sciencedirect.com/science/journal/00381101
Type: article (author version)
URI: http://hdl.handle.net/2115/14594
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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