Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier

Marukame, T.; Ishikawa, T.; Sekine, W.; Matsuda, K.; Uemura, T.; Yamamoto, M.

doi:10.1109/TMAG.2006.878859


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Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier

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Title:	Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier
Authors:	Marukame, T. Browse this author
	Ishikawa, T. Browse this author
	Sekine, W. Browse this author
	Matsuda, K. Browse this author →KAKEN DB
	Uemura, T. Browse this author →KAKEN DB
	Yamamoto, M. Browse this author →KAKEN DB
Keywords:	Co-based full Heusler alloy
	half-metallic ferromagnet
	magnetic tunnel junction
	tunnel magnetoresistance
Issue Date:	Oct-2006
Publisher:	IEEE
Journal Title:	IEEE Transactions on Magnetics
Volume:	42
Issue:	10
Start Page:	2652
End Page:	2654
Publisher DOI:	10.1109/TMAG.2006.878859
Abstract:	Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios. This adds to the promise of the fully epitaxial MTJ as a key device structure for utilizing the intrinsically high spin polarizations of Co-based full-Heusler alloy thin films.
Rights:	© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Type:	article
URI:	http://hdl.handle.net/2115/14894
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 丸亀孝生

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