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Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier

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タイトル: Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier
著者: Marukame, T. 著作を一覧する
Ishikawa, T. 著作を一覧する
Sekine, W. 著作を一覧する
Matsuda, K. 著作を一覧する
Uemura, T. 著作を一覧する
Yamamoto, M. 著作を一覧する
キーワード: Co-based full Heusler alloy
half-metallic ferromagnet
magnetic tunnel junction
tunnel magnetoresistance
発行日: 2006年10月
出版者: IEEE
誌名: IEEE Transactions on Magnetics
巻: 42
号: 10
開始ページ: 2652
終了ページ: 2654
出版社 DOI: 10.1109/TMAG.2006.878859
抄録: Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios. This adds to the promise of the fully epitaxial MTJ as a key device structure for utilizing the intrinsically high spin polarizations of Co-based full-Heusler alloy thin films.
Rights: © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
資料タイプ: article
URI: http://hdl.handle.net/2115/14894
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 丸亀 孝生

 

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