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Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures

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Title: Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures
Authors: Hasegawa, Hideki Browse this author
Keywords: GaN
AlGaN
Sensors
Schottky diodes
HFETs nanowires
MBE
Issue Date: Mar-2007
Publisher: Elsevier
Journal Title: Current Applied Physics
Volume: 7
Issue: 3
Start Page: 318
End Page: 327
Publisher DOI: 10.1016/j.cap.2006.09.028
Abstract: For successful construction of sensor devices and their future on-chip integration on nanostructures, this paper discusses the present status of understanding and control of surfaces and heterointerfaces of the AlGaN/GaN material system by reviewing a series of works recently carried out by the authors’ group. Leakage currents in Schottky contacts are explained by the authors’ thin surface barrier (TSB) model. An important role is played by oxygen shallow donors in leakage in AlGaN Schottky diodes. A large leakage reduction has been achieved by a novel surface control process for oxygen gettering. An unprecedented high sensitivity has been obtained in AlGaN/GaN Schottky diode hydrogen sensor by applying the surface control process. Liquid-phase AlGaN/GaN sensors having an open-gate HFET structure show a very good pH sensing capability as well as a good sensing capability of polar liquids. Finally, the selective MBE growth of AlGaN/GaN nanowire network is discussed as a basic hardware structure for the on-chip integration of sensors, paying attention to the heterointerface control.
Relation: http://www.sciencedirect.com/science/journal/15671739
Type: article (author version)
URI: http://hdl.handle.net/2115/20151
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 長谷川 英機

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