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Atomic imaging of an InSe single-crystal surface with atomic force microscope

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/20579

Title: Atomic imaging of an InSe single-crystal surface with atomic force microscope
Authors: Uosaki, Kohei Browse this author
Koinuma, Michio Browse this author
Issue Date: 1-Aug-1993
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 74
Issue: 3
Start Page: 1675
End Page: 1678
Publisher DOI: 10.1063/1.354820
Abstract: The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Rights: Copyright © 1993 American Institute of Physics
Type: article
URI: http://hdl.handle.net/2115/20579
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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