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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
| Title: | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Jinushi, Kei-ichiroh Browse this author | | Tomozawa, Hidemasa Browse this author | | Hasegawa, Hideki Browse this author |
| Keywords: | single electron transistors | | Schottky in-plane gate (IPG) | | Schottky wrap gate (WPG) | | single-quantum dot | | multiple-quantum dot | | Coulomb blockade |
| Issue Date: | Mar-1997 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 36 |
| Issue: | 3B |
| Start Page: | 1678 |
| End Page: | 1685 |
| Publisher DOI: | 10.1143/JJAP.36.1678 |
| Abstract: | Single-dot and multiple (2, 3, 18, and 37)-dot single electron transistors (SETs) based on the control of a two-dimensional electron gas (2DEG) with a recently proposed Schottky in-plane gate (IPG) and a newly introduced Schottky wrap gate (WPG) were successfully fabricated on AlGaAs/GaAs wafers using electron beam (EB) lithography and their transport properties were investigated. Each of the fabricated SETs showed Coulomb blockade-like conductance oscillation. In single-dot SETs, a strong correlation was found between the device dimensions and the temperature limit of conductance oscillation. Conductance oscillation characteristics of multiple-dot SETs were complicated, and were not explained by the classical Coulomb blockade theory. Based on a simplified theoretical analysis using computer simulation, it was shown that quantized energy due to electron confinement and dot-coupling can dominate the charging effect in the fabricated SETs. |
| Rights: | Copyright © 1997 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33085 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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