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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
| Title: | Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | lateral surface superlattice | | Si interface control layer | | Schottky barrier | | electron beam induced current | | conductance oscillation |
| Issue Date: | Feb-1996 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 35 |
| Issue: | 2B |
| Start Page: | 1340 |
| End Page: | 1347 |
| Publisher DOI: | 10.1143/JJAP.35.1340 |
| Abstract: | A novel lateral surface superlattice (LSSL) device structure based on Schottky barrier height (SBH) difference produced by periodic insertion of Si interface control layer (Si ICL) stripes is proposed, fabricated and characterized. Two-dimensional computer simulation was performed first to gain information on basic design considerations. An electron beam induced current (EBIC) study on the fabricated device directly confirmed SBH modulation by Si ICL stripes. The devices showed periodic oscillations of drainconductance and transconductance at low temperatures up to 10K whose behavior was distinctly different from that of previous split-gate devices. The mechanism of these oscillations was explained by a sequential resonant tunneling model. According to a quantitative analysis of the data, SBH difference of 70-150meV was produced at the metalsemiconductor interface and it produced quantized levels with the separation of 2-3meV at heterointerface. |
| Rights: | Copyright © 1996 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33087 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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