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Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures

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Title: Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures
Authors: Sato, Taketomo Browse this author →KAKEN DB
Mizohata, Akinori Browse this author
Issue Date: 20-Feb-2008
Publisher: The Electrochemical Society
Journal Title: Electrochemical and Solid-State Letters
Volume: 11
Issue: 5
Start Page: H111
End Page: H113
Publisher DOI: 10.1149/1.2844216
Abstract: A photoelectrochemical (PEC) process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode.
Rights: © The Electrochemical Society, Inc. 2008. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochem. Solid-State Lett., Volume 11, Issue 5, pp. H111-H113 (2008).
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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