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Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers

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Title: Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers
Authors: Matsumura, N. Browse this author
Muto, S. Browse this author →KAKEN DB
Ganapathy, S. Browse this author
Suemune, I. Browse this author →KAKEN DB
Numata, K. Browse this author
Yabuta, K. Browse this author
Keywords: GaNAs
strain compensation
InAs self-assembled quantum dots
lattice deformation,
ion channeling
Issue Date: 2006
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 45
Issue: 2
Start Page: L57
End Page: L59
Publisher DOI: 10.1143/JJAP.45.L57
Abstract: Lattice deformations of InAs self-assembled quantum dots, which were grown on (001)GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged.
Type: article (author version)
URI: http://hdl.handle.net/2115/33909
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 末宗 幾夫

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