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Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers
| Title: | Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers |
| Authors: | Matsumura, N. Browse this author | | Muto, S. Browse this author →KAKEN DB | | Ganapathy, S. Browse this author | | Suemune, I. Browse this author →KAKEN DB | | Numata, K. Browse this author | | Yabuta, K. Browse this author |
| Keywords: | GaNAs | | strain compensation | | InAs self-assembled quantum dots | | lattice deformation, | | ion channeling |
| Issue Date: | 2006 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics |
| Volume: | 45 |
| Issue: | 2 |
| Start Page: | L57 |
| End Page: | L59 |
| Publisher DOI: | 10.1143/JJAP.45.L57 |
| Abstract: | Lattice deformations of InAs self-assembled quantum dots, which were grown on (001)GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33909 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 末宗 幾夫
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