Shuttle instability induced by an ac gate in a nanoelectromechanical single-electron transistor


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Files in This Item:

GetPDFServlet.pdf

313.1 kB

PDF

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/34789

Title:	Shuttle instability induced by an ac gate in a nanoelectromechanical single-electron transistor
Authors:	Nishiguchi, Norihiko Browse this author →KAKEN DB
Issue Date:	Aug-2008
Publisher:	Amer Physical Soc
Journal Title:	Physical Review B
Volume:	78
Issue:	8
Start Page:	085407
Publisher DOI:	10.1103/PhysRevB.78.085407
Abstract:	We theoretically investigate shuttle instability induced by an ac gate in a nanoelectromechanical single-electron transistor containing a moveable grain. The ac gate causes periodic variations of charge on the grain, which turn (in the bias field) to driving force of grain vibrations. The forced grain vibrations and related electron transport show drastic and hysteretic changes for variations of the bias or the gate frequency due to transitions in transport mechanisms between tunneling and shuttling.
Rights:	© 2008 American Physical Society
Type:	article
URI:	http://hdl.handle.net/2115/34789
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 西口規彦

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University