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Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition

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Title: Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition
Authors: Sugawara, Katsuya Browse this author
Kotani, Junji Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 13-Apr-2009
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 94
Issue: 15
Start Page: 152106
Publisher DOI: 10.1063/1.3119643
Abstract: A deep level with an activation energy of 1.0 eV in n-type Al0.26Ga0.74N grown by metal-organic chemical vapor deposition was detected by deep-level transient spectroscopy (DLTS) with a sampling time window of several seconds. The deep-level density was 6×10^15 cm^[-3]. At the temperatures around which the DLTS peaks were observed, capacitance transient was measured. Under the dark condition, a capacitance increase was observed, corresponding to the thermal emission of electrons from the level with 1.0 eV activation energy. After that, we observed a large capacitance increase under illumination with 2.3 eV photon energy. On the basis of potential simulation taking account of deep levels, we found that the photoinduced capacitance change arose from electron emission from additional near-midgap levels in energy ranging from EC-1.5 to EC-2.3 eV.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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