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Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition

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タイトル: Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition
著者: Sugawara, Katsuya 著作を一覧する
Kotani, Junji 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2009年 4月13日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 94
号: 15
開始ページ: 152106
出版社 DOI: 10.1063/1.3119643
抄録: A deep level with an activation energy of 1.0 eV in n-type Al0.26Ga0.74N grown by metal-organic chemical vapor deposition was detected by deep-level transient spectroscopy (DLTS) with a sampling time window of several seconds. The deep-level density was 6×10^15 cm^[-3]. At the temperatures around which the DLTS peaks were observed, capacitance transient was measured. Under the dark condition, a capacitance increase was observed, corresponding to the thermal emission of electrons from the level with 1.0 eV activation energy. After that, we observed a large capacitance increase under illumination with 2.3 eV photon energy. On the basis of potential simulation taking account of deep levels, we found that the photoinduced capacitance change arose from electron emission from additional near-midgap levels in energy ranging from EC-1.5 to EC-2.3 eV.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Relation (URI):
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保


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