|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition
| Title: | Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition |
| Authors: | Sugawara, Katsuya Browse this author | | Kotani, Junji Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | 13-Apr-2009 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 94 |
| Issue: | 15 |
| Start Page: | 152106 |
| Publisher DOI: | 10.1063/1.3119643 |
| Abstract: | A deep level with an activation energy of 1.0 eV in n-type Al0.26Ga0.74N grown by metal-organic chemical vapor deposition was detected by deep-level transient spectroscopy (DLTS) with a sampling time window of several seconds. The deep-level density was 6×10^15 cm^[-3]. At the temperatures around which the DLTS peaks were observed, capacitance transient was measured. Under the dark condition, a capacitance increase was observed, corresponding to the thermal emission of electrons from the level with 1.0 eV activation energy. After that, we observed a large capacitance increase under illumination with 2.3 eV photon energy. On the basis of potential simulation taking account of deep levels, we found that the photoinduced capacitance change arose from electron emission from additional near-midgap levels in energy ranging from EC-1.5 to EC-2.3 eV. |
| Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/38313 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 橋詰 保
|
