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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.153 >
50keV Fe+をイオン注入したGaAsのDLTS
| Title: | 50keV Fe+をイオン注入したGaAsのDLTS |
| Other Titles: | Deep Level Transient Spectroscopy of 50 keV Fe-Ion Implanted GaAs |
| Authors: | 谷脇, 雅文1 Browse this author | | 小出, 秀人2 Browse this author | | 吉田, 博行3 Browse this author | | 林, 禎彦4 Browse this author |
| Authors(alt): | Taniwaki, Masafumi1 | | Koide, Hideto2 | | Yoshida, Hiroyuki3 | | Hayashi, Yoshihiko4 |
| Issue Date: | 29-Nov-1990 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 153 |
| Start Page: | 115 |
| End Page: | 119 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/42257 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.153
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