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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.153 >

50keV Fe+をイオン注入したGaAsのDLTS

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42257

Title: 50keV Fe+をイオン注入したGaAsのDLTS
Other Titles: Deep Level Transient Spectroscopy of 50 keV Fe-Ion Implanted GaAs
Authors: 谷脇, 雅文1 Browse this author
小出, 秀人2 Browse this author
吉田, 博行3 Browse this author
林, 禎彦4 Browse this author
Authors(alt): Taniwaki, Masafumi1
Koide, Hideto2
Yoshida, Hiroyuki3
Hayashi, Yoshihiko4
Issue Date: 29-Nov-1990
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 153
Start Page: 115
End Page: 119
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42257
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.153

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