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Phase Transformation and Capacitance Enhancement of Anodic ZrO2-SiO2

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/44391

Title: Phase Transformation and Capacitance Enhancement of Anodic ZrO2-SiO2
Authors: Koyama, S. Browse this author
Aoki, Y. Browse this author
Sakaguchi, N. Browse this author
Nagata, S. Browse this author
Habazaki, H. Browse this author
Issue Date: 22-Oct-2010
Publisher: Electrochemical Society
Journal Title: Journal of the Electrochemical Society
Volume: 157
Issue: 12
Start Page: C444
End Page: C451
Publisher DOI: 10.1149/1.3503592
Abstract: Capacitance enhancement of anodic oxide films on zirconium by adding silicon is reported here with correlation to the phase transformation of the oxide. The anodic oxide film formed on zirconium consists mainly of monoclinic ZrO2, which changes to tetragonal ZrO2 phase on the Zr-5.5 atom % Si. Further increase in the silicon contents to 10 and 16 atom % results in the formation of amorphous oxide up to 30 V, above which two-layered films, comprising an outer crystalline tetragonal-phase oxide layer and an inner amorphous layer, are developed. The relative thickness of the outer crystalline layer to the total film thickness increases with formation voltage. The highest capacitance of the anodic oxide films is obtained on the Zr-10 atom % Si. The changes in capacitance, permittivity and formation ratio of anodic oxide films with alloy composition are discussed with phase transformation and growth process of anodic oxides.
Rights: © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc., 157(12), C444-C451 (2010)
Type: article
URI: http://hdl.handle.net/2115/44391
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

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