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Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

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Title: Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures
Authors: Akazawa, M. Browse this author
Gao, B. Browse this author
Hashizume, T. Browse this author
Hiroki, M. Browse this author
Yamahata, S. Browse this author
Shigekawa, N. Browse this author
Issue Date: 4-Apr-2011
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 98
Issue: 14
Start Page: 142117
Publisher DOI: 10.1063/1.3578449
Abstract: The barrier structure in lattice-matched InAlN/GaN heterostructures with AlGaN-based spacer layers grown by metal organic vapor phase epitaxy was studied by the capacitance-voltage (C-V) method. To investigate the characteristics under positive bias, an Al2O3 overlayer was added. The C-V characteristic of a sample with an Al0.38Ga0.62N (5 nm)/AlN (0.75 nm) double spacer layer exhibited an anomalous saturation at a value far below the insulator capacitance under positive bias, which indicated electron accumulation at the InAlN/AlGaN interface. The C-V characteristic of an alternative sample with a single Al0.44Ga0.56N (1.5 nm) spacer layer did not exhibit the anomalous saturation.
Rights: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 142117 and may be found at https://dx.doi.org/10.1063/1.3578449
Type: article
URI: http://hdl.handle.net/2115/45385
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 赤澤 正道

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