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Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs
| Title: | Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs |
| Authors: | Ohi, Kota Browse this author | | Asubar, Joel Tacla Browse this author | | Nishiguchi, Kenya Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Keywords: | Access resistance | | current collapse | | GaN | | high-electron mobility transistor (HEMT) | | multi-mesa-channel (MMC) | | off-state stress | | subthreshold slope | | threshold voltage |
| Issue Date: | Oct-2013 |
| Publisher: | IEEE |
| Journal Title: | IEEE Transactions on Electron Devices |
| Volume: | 60 |
| Issue: | 10 |
| Start Page: | 2997 |
| End Page: | 3004 |
| Publisher DOI: | 10.1109/TED.2013.2266663 |
| Abstract: | We develop and characterize multi-mesa-channel (MMC) AlGaN/GaN high-electron mobility transistors (HEMTs),in which a periodic trench structure is fabricated only under the gate electrode. A surrounding-field effect in the MMC structure results in a shallower threshold voltage and a smaller subthreshold slope than those of the standard planar-type HEMT. In addition, the MMC HEMT shows a low knee voltage and a weak dependence of on-resistance (RON) on the gate-drain distance. Following identical off-state bias stress, the MMC HEMT exhibits low current collapse. The relative decrease in access resistance of the MMC device compared with the planar device can reduce the effects of access resistance on the drain current. It is likely that a high impedance of each nanochannel also contributes to the current stability of the MMC HEMT. |
| Rights: | © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/53666 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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