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Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy
Title: | Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy |
Authors: | Hashizume, Tamotsu1 Browse this author →KAKEN DB |
Authors(alt): | 橋詰, 保1 |
Issue Date: | 23-Sep-2002 |
Publisher: | American Institute of Physics |
Journal Title: | Applied Physics Letters |
Volume: | 81 |
Issue: | 13 |
Start Page: | 2382 |
End Page: | 2384 |
Publisher DOI: | 10.1063/1.1509119 |
Abstract: | Electronic properties of "free" n-In0.49Ga0.51P surfaces grown by metalorganic vapor-phase epitaxy were directly characterized using the contactless capacitance–voltage technique. The HCl-treated surface showed a wide and continuous distribution of surface state density (Dss) in energy with relatively low densities, leading to no pronounced Fermi-level pinning effect on the surface. The minimum Dss value was determined to be 8×10(11) cm(–2) eV(–1). The surface Fermi-level position was found at 1.2 eV above the valence band maximum, consistent with the x-ray photoelectron spectroscopy results. |
Rights: | Copyright © 2002 American Institute of Physics |
Relation: | http://www.aip.org/ |
Type: | article |
URI: | http://hdl.handle.net/2115/5541 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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