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Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

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Title: Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy
Authors: Hashizume, Tamotsu1 Browse this author →KAKEN DB
Authors(alt): 橋詰, 保1
Issue Date: 23-Sep-2002
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 81
Issue: 13
Start Page: 2382
End Page: 2384
Publisher DOI: 10.1063/1.1509119
Abstract: Electronic properties of "free" n-In0.49Ga0.51P surfaces grown by metalorganic vapor-phase epitaxy were directly characterized using the contactless capacitance–voltage technique. The HCl-treated surface showed a wide and continuous distribution of surface state density (Dss) in energy with relatively low densities, leading to no pronounced Fermi-level pinning effect on the surface. The minimum Dss value was determined to be 8×10(11) cm(–2) eV(–1). The surface Fermi-level position was found at 1.2 eV above the valence band maximum, consistent with the x-ray photoelectron spectroscopy results.
Rights: Copyright © 2002 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5541
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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