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Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

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Title: Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
Authors: Matsuo, Kazushi Browse this author
Negoro, Noboru Browse this author
Kotani, Junji Browse this author
Hashizume, Tamotsu4 Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 橋詰, 保4
Keywords: GaN
Gas sensor
Issue Date: 15-May-2005
Publisher: Elsevier B.V.
Journal Title: Applied Surface Science
Volume: 244
Issue: 1-4
Start Page: 273
End Page: 276
Publisher DOI: 10.1016/j.apsusc.2004.10.149
Abstract: Exposure of Pt/GaN and Pt/AlGaN/GaN Schottky diodes to H2 gas at moderately high temperatures around 100 °C resulted in marked increase of forward and reverse currents. Increase was much larger in the Pt/AlGaN/GaN diode than in the Pt/GaN diode. Rapid turn-on responses and somewhat slower turn-off responses were observed with reproducible response magnitudes. A rigorous computer simulation of I–V curves indicated that current changes are due to changes in the Schottky barrier height caused either by H-induced formation of interfacial dipole or by hydrogen passivation of interface states.
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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