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Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

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Title: Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
Authors: Hashizume, Tamotsu1 Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 橋詰, 保1
Keywords: GaN
Fermi level pinning
Issue Date: 15-Jul-2004
Publisher: Elsevier B.V.
Journal Title: Applied Surface Science
Volume: 234
Issue: 1-4
Start Page: 387
End Page: 394
Publisher DOI: 10.1016/j.apsusc.2004.05.091
Abstract: Effects of device processing on chemical and electronic properties of AlGaN surfaces were investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration such as stoichiometry disorder and nitrogen deficiency (N deficiency) at the AlGaN surfaces processed by high-temperature annealing, H2-plasma cleaning, dry etching in CH4/H2/Ar plasma and deposition of SiO2. This resulted in high density of surface states at the processed AlGaN surface. Furthermore, the N deficiency introduced a localized deep donor level related to N vacancy (VN) at AlGaN surfaces. Such electronic states governed by a VN-related deep donor and surface state continuum can cause strong Fermi level pinning at the AlGaN surface, reduction of the barrier height and excess leakage currents at the AlGaN Schottky interface and serious drain current collapse in AlGaN/GaN heterostructure field effect transistors. The SiNx- or A12O3-based passivation scheme with a combination of a remote N2-plasma treatment was found to be effective in suppressing formation of VN-related surface defects at AlGaN surfaces.
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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