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A theoretical study and realization of new spin quantum cross structure devices using organic materials

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Title: A theoretical study and realization of new spin quantum cross structure devices using organic materials
Authors: Kondo, Kenji Browse this author →KAKEN DB
Kaiju, Hideo Browse this author →KAKEN DB
Ishibashi, Akira Browse this author →KAKEN DB
Keywords: simulation
Issue Date: 10-May-2010
Publisher: Cambridge University Press
Journal Title: MRS Proceedings
Volume: 1198
Start Page: 1198-E07-01
Publisher DOI: 10.1557/PROC-1198-E07-01
Abstract: We have proposed a spin quantum cross structure (SQCS) device as a candidate beyond CMOS. The SQCS device consists of two ferromagnetic metal thin films with their edges crossed, and sandwiches a few atoms or molecules. In this work, the spin dependent transport formula has been derived for SQCS devices with collinear ferromagnetic electrodes within the framework of the Anderson Hamiltonian. Also, the calculation of the magnetoresistance (MR) ratio has been done as a function of renormalized transfer matrices including magnetostriction effects and the other effects phenomenologically. It is shown that the MR ratio can be controlled by changing the renormalized coupling constants. The MR ratio is represented by a new formula. Also, we have realized an SQCS device with Ni magnetic thin-film electrodes, sandwiching poly (3-hexylthiophene) (P3HT): 6, 6-phenyl-C61-butyric acid methyl ester (PCBM) organic molecules between both the electrodes. The current-voltage characteristics of SQCS devices were measured by a four-terminal method and agree well with the theoretical results, quantitatively.
Rights: © 2010 Materials Research Society
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 近藤 憲治

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