|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
| Title: | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces |
| Authors: | Yatabe, Zenji Browse this author | | Asubar, Joel T. Browse this author | | Sato, Taketomo Browse this author →KAKEN DB | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Keywords: | Al2O3 | | AlGaN | | dry etching | | high electron mobility transistors | | interface states | | metal-insulator-semiconductor structures |
| Issue Date: | May-2015 |
| Publisher: | Wiley-Blackwell |
| Journal Title: | Physica status solidi A applications and materials science |
| Volume: | 212 |
| Issue: | 5 |
| Start Page: | 1075 |
| End Page: | 1080 |
| Publisher DOI: | 10.1002/pssa.201431652 |
| Abstract: | We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al2O3/AlGaN/GaN structures. The experimentally measured capacitance-voltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al2O3/AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al2O3/AlGaN interface. |
| Rights: | "This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 212, Issue 5, pages 1075–1080, May 2015, which has been published in final form at http://doi.org/10.1002/pssa.201431652 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving." |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/61442 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 橋詰 保
|
