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Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

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Title: Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
Authors: Yatabe, Zenji Browse this author
Asubar, Joel T. Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords: Al2O3
AlGaN
dry etching
high electron mobility transistors
interface states
metal-insulator-semiconductor structures
Issue Date: May-2015
Publisher: Wiley-Blackwell
Journal Title: Physica status solidi A applications and materials science
Volume: 212
Issue: 5
Start Page: 1075
End Page: 1080
Publisher DOI: 10.1002/pssa.201431652
Abstract: We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al2O3/AlGaN/GaN structures. The experimentally measured capacitance-voltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al2O3/AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al2O3/AlGaN interface.
Rights: "This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 212, Issue 5, pages 1075–1080, May 2015, which has been published in final form at http://doi.org/10.1002/pssa.201431652 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving."
Type: article (author version)
URI: http://hdl.handle.net/2115/61442
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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