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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

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タイトル: Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
著者: Kaneki, Shota 著作を一覧する
Ohira, Joji 著作を一覧する
Toiya, Shota 著作を一覧する
Yatabe, Zenji 著作を一覧する
Asubar, Joel T. 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2016年10月18日
出版者: American Institute of Physics (AIP)
誌名: Applied physics letters
巻: 109
号: 16
開始ページ: 162104-1
終了ページ: 162104-5
出版社 DOI: 10.1063/1.4965296
抄録: Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (<3 x 10(6) cm(-2)). The Al2O3 layer was prepared by atomic layer deposition. The as-deposited metal-oxide-semiconductor (MOS) sample showed a significant frequency dispersion and a bump-like feature in capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 10(12) cm(-1) eV(-1). On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 degrees C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 x 10(11) cm(-1) eV(-1) and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 degrees C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities.
Rights: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied physics letters 109 (16) 162104, and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4965296.
資料タイプ: article
URI: http://hdl.handle.net/2115/67320
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保

 

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