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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
| Title: | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates |
| Authors: | Kaneki, Shota Browse this author | | Ohira, Joji Browse this author | | Toiya, Shota Browse this author | | Yatabe, Zenji Browse this author | | Asubar, Joel T. Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | 18-Oct-2016 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Applied physics letters |
| Volume: | 109 |
| Issue: | 16 |
| Start Page: | 162104-1 |
| End Page: | 162104-5 |
| Publisher DOI: | 10.1063/1.4965296 |
| Abstract: | Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (<3 x 10(6) cm(-2)). The Al2O3 layer was prepared by atomic layer deposition. The as-deposited metal-oxide-semiconductor (MOS) sample showed a significant frequency dispersion and a bump-like feature in capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 10(12) cm(-1) eV(-1). On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 degrees C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 x 10(11) cm(-1) eV(-1) and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 degrees C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities. |
| Rights: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied physics letters 109 (16) 162104, and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4965296. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/67320 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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