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Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures

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Please use this identifier to cite or link to this item:https://doi.org/10.14943/doctoral.k13083
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Title: Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures
Other Titles: GaN HEMTにおける表面起因の動作不安定性とAl2O3 MOS構造による制御
Authors: 西口, 賢弥 Browse this author
Issue Date: 22-Mar-2018
Publisher: Hokkaido University
Conffering University: 北海道大学
Degree Report Number: 甲第13083号
Degree Level: 博士
Degree Discipline: 工学
Examination Committee Members: (主査) 教授 本久 順一, 教授 葛西 誠也, 特任教授 佐野 栄一, 教授 橋詰 保
Degree Affiliation: 情報科学研究科(情報エレクトロニクス専攻)
Type: theses (doctoral)
URI: http://hdl.handle.net/2115/70528
Appears in Collections:課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology)
学位論文 (Theses) > 博士 (工学)

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