原料連続供給型引き下げ法によるBi12GeO20単結晶の育成

植田, 隆全; 樋口, 幹雄; 小平, 紘平

doi:10.2109/jcersj.109.1271_627


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原料連続供給型引き下げ法によるBi12GeO20単結晶の育成

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/73136

Title:	原料連続供給型引き下げ法によるBi12GeO20単結晶の育成
Other Titles:	Growth of Bi12GeO20 Single Crystals by the Pulling-Down Method with a Continuous Powder Feed System
Authors:	植田, 隆全¹ Browse this author
	樋口, 幹雄² Browse this author →KAKEN DB
	小平, 紘平³ Browse this author
Authors(alt):	Ueda, Takamasa¹
	Higuchi, Mikio²
	Kodaira, Kohei³
Keywords:	Bi12GeO20
	Pulling-down method
	Continuous powder feed system
	Interface shape
	Core formation
Issue Date:	1-Jul-2001
Publisher:	日本セラミックス協会
Journal Title:	Journal of the Ceramic Society of Japan
Journal Title(alt):	日本セラミックス協会学術論文誌
Volume:	109
Issue:	1271
Start Page:	627
End Page:	630
Publisher DOI:	10.2109/jcersj.109.1271_627
Abstract:	Transparent and crack-free Bi12GeO20 single crystals have been grown by the pulling-down method with a continuous powder feed system. Bi-rich feed powder having a composition of 14.1mol% GeO2 is favorable to obtain stoichiometric crystals. Striation-free crystals with an increased transmittance are grown under a small temperature gradient. The shape of the solid-liquid interface during the crystal growth is nearly flat, which is advantageous to avoid core formation. Average dislocation density is estimated to be 2×104/cm2, which is comparable to that of Bi12GeO20 crystals grown by the conventional Czochralski method.
Rights:	https://creativecommons.org/licenses/by-nd/4.0/deed.ja
Type:	article
URI:	http://hdl.handle.net/2115/73136
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 樋口幹雄

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