窒素プラズマを用いた4H-SiC表面の窒化に関する研究


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Please use this identifier to cite or link to this item:https://doi.org/10.14943/doctoral.k13650

Related Items in HUSCAP:

Title:	窒素プラズマを用いた4H-SiC表面の窒化に関する研究
Other Titles:	Studies on surface nitriding of 4H-SiC using nitrogen plasmas
Authors:	嶋林, 正晴 Browse this author
Issue Date:	25-Mar-2019
Publisher:	Hokkaido University
Conffering University:	北海道大学
Degree Report Number:	甲第13650号
Degree Level:	博士
Degree Discipline:	工学
Examination Committee Members:	(主査) 教授佐々木浩一, 特任教授越崎直人, 教授富岡智, 教授朝倉清高
Degree Affiliation:	工学院（量子理工学専攻）
Type:	theses (doctoral)
URI:	http://hdl.handle.net/2115/74173
Appears in Collections:	課程博士 (Doctorate by way of Advanced Course) > 工学院(Graduate School of Engineering) 学位論文 (Theses) > 博士　（工学）

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