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Flux Growth and Superconducting Properties of (Ce,Pr)OBiS2 Single Crystals

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Title: Flux Growth and Superconducting Properties of (Ce,Pr)OBiS2 Single Crystals
Authors: Nagao, Masanori Browse this author
Miura, Akira Browse this author →KAKEN DB
Urushihara, Daisuke Browse this author
Maruyama, Yuki Browse this author
Goto, Yosuke Browse this author
Mizuguchi, Yoshikazu Browse this author
Moriyoshi, Chikako Browse this author
Kuroiwa, Yoshihiro Browse this author
Wang, Yongming Browse this author
Watauchi, Satoshi Browse this author
Asaka, Toru Browse this author
Takano, Yoshihiko Browse this author
Tadanaga, Kiyoharu Browse this author
Tanaka, Isao Browse this author
Keywords: BiS2 superconductor
flux growth
single crystals
Issue Date: 4-Feb-2020
Publisher: Frontiers Media
Journal Title: Frontiers in Chemistry
Volume: 8
Start Page: 44
Publisher DOI: 10.3389/fchem.2020.00044
Abstract: Ce1-xPrxOBiS2 (0. 1 <= x <= 0.9) single crystals were grown using a CsCl flux method. Their structural and physical properties were examined by X-ray diffraction, X-ray absorption, transmission electron microscopy, and electrical resistivity. All of the Ce1-xPrxOBiS2 single crystals with 0.1 <= x <= 0.9 exhibited tetragonal phase. With increasing Pr content, the a-axis and c-axis lattice parameters decreased and increased, respectively. Transmission electron microscope analysis of Ce0.1Pr0.9OBiS2 (x = 0.9) single crystal showed no stacking faults. Atomic-resolution energy dispersive X-ray spectrometry mapping revealed that Bi, Ce/Pr, O, and S occupied different crystallographic sites, while Ce and Pr randomly occupied the same sites. X-ray absorption spectra showed that an increase of the Pr ratio increased the ratio of Ce4+/Ce3+. All of the Ce1-xPrxOBiS2 crystals showed superconducting transition, with a maximum transition temperature of similar to 4 K at x = 0.9.
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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