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Al2O3/GaN界面の制御とMOSゲート高電子移動度トランジスタへの応用

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Please use this identifier to cite or link to this item:https://doi.org/10.14943/doctoral.k14586
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Title: Al2O3/GaN界面の制御とMOSゲート高電子移動度トランジスタへの応用
Other Titles: Interface Control of Al2O3/GaN Structures for MOS-gate High Electron Mobility Transistors
Authors: 金木, 奨太 Browse this author
Issue Date: 25-Mar-2021
Publisher: Hokkaido University
Conffering University: 北海道大学
Degree Report Number: 甲第14586号
Degree Level: 博士
Degree Discipline: 工学
Examination Committee Members: (主査) 教授 葛西 誠也, 教授 本久 順一, 准教授 佐藤 威友
Degree Affiliation: 情報科学研究科(情報エレクトロニクス専攻)
Type: theses (doctoral)
URI: http://hdl.handle.net/2115/81293
Appears in Collections:課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology)
学位論文 (Theses) > 博士 (工学)

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