動的電子顕微鏡観察法による抵抗変化メモリの動作特性とナノ構造変化に関する研究 [論文内容及び審査の要旨]


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Files in This Item:

Satoshi_Muto_abstract.pdf	論文内容の要旨	145.07 kB	PDF	View/Open
Satoshi_Muto_review.pdf	審査の要旨	147.08 kB	PDF	View/Open

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/81402

Related Items in HUSCAP:

Title:	動的電子顕微鏡観察法による抵抗変化メモリの動作特性とナノ構造変化に関する研究 [論文内容及び審査の要旨]
Other Titles:	Study on operation property and nano-structural evolution of resistive random access memory by means of in situ electron microscopy [an abstract of dissertation and a summary of dissertation review]
Authors:	武藤, 恵 Browse this author
Issue Date:	25-Mar-2021
Publisher:	Hokkaido University
Conffering University:	北海道大学
Degree Report Number:	甲第14590号
Degree Level:	博士
Degree Discipline:	工学
Examination Committee Members:	(主査) 教授末岡和久, 教授植村哲也, 教授村山明宏, 准教授有田正志
Degree Affiliation:	情報科学研究科(情報エレクトロニクス専攻)
Rights:	https://creativecommons.org/licenses/by/4.0/
Type:	theses (doctoral - abstract and summary of review)
URI:	http://hdl.handle.net/2115/81402
Appears in Collections:	課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology) 学位論文 (Theses) > 博士　（工学）

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