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Hokkaido University Collection of Scholarly and Academic Papers
>
Theses
>
博士 (工学)
>
動的電子顕微鏡観察法による抵抗変化メモリの動作特性とナノ構造変化に関する研究
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Satoshi_Muto_r2_210621.pdf
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Please use this identifier to cite or link to this item:
https://doi.org/10.14943/doctoral.k14590
Related Items in HUSCAP:
論文内容及び審査の要旨
動的電子顕微鏡観察法による抵抗変化メモリの動作特性とナノ構造変化に関する研究 [論文内容及び審査の要旨]
Title:
動的電子顕微鏡観察法による抵抗変化メモリの動作特性とナノ構造変化に関する研究
Other Titles:
Study on operation property and nano-structural evolution of resistive random access memory by means of in situ electron microscopy
Authors:
武藤, 恵
Browse this author
Issue Date:
25-Mar-2021
Publisher:
Hokkaido University
Conffering University:
北海道大学
Degree Report Number:
甲第14590号
Degree Level:
博士
Degree Discipline:
工学
Examination Committee Members:
(主査) 教授 末岡 和久, 教授 植村 哲也, 教授 村山 明宏, 准教授 有田 正志
Degree Affiliation:
情報科学研究科(情報エレクトロニクス専攻)
Type:
theses (doctoral)
URI:
http://hdl.handle.net/2115/81405
Appears in Collections:
課程博士 (Doctorate by way of Advanced Course)
>
情報科学院(Graduate School of Information Science and Technology)
学位論文 (Theses)
>
博士 (工学)
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