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Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

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Title: Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser
Authors: Fujita, F. Browse this author →KAKEN DB
Homma, A. Browse this author
Oshiki, Y. Browse this author
Kaneko, J. H. Browse this author →KAKEN DB
Tsuji, K. Browse this author
Meguro, K. Browse this author
Yamamoto, Y. Browse this author
Imai, T. Browse this author
Teraji, T. Browse this author
Sawamura, T. Browse this author
Furusaka, M. Browse this author
Keywords: time of flight
UV pulse laser
carrier drift velocity
CVD diamond
Issue Date: Dec-2005
Publisher: Elsevier
Journal Title: Diamond and Related Materials
Volume: 14
Issue: 11-12
Start Page: 1992
End Page: 1994
Publisher DOI: 10.1016/j.diamond.2005.08.003
Abstract: There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse width. In order to realize response times faster than 20 ns, we employed a 50 Ω coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns.
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Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 藤田 文行

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