| Title: | Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser |
| Authors: | Fujita, F. Browse this author →KAKEN DB |
| Homma, A. Browse this author |
| Oshiki, Y. Browse this author |
| Kaneko, J. H. Browse this author →KAKEN DB |
| Tsuji, K. Browse this author |
| Meguro, K. Browse this author |
| Yamamoto, Y. Browse this author |
| Imai, T. Browse this author |
| Teraji, T. Browse this author |
| Sawamura, T. Browse this author |
| Furusaka, M. Browse this author |
| Keywords: | time of flight |
| UV pulse laser |
| carrier drift velocity |
| CVD diamond |
| Issue Date: | Dec-2005 |
| Publisher: | Elsevier |
| Journal Title: | Diamond and Related Materials |
| Volume: | 14 |
| Issue: | 11-12 |
| Start Page: | 1992 |
| End Page: | 1994 |
| Publisher DOI: | 10.1016/j.diamond.2005.08.003 |
| Abstract: | There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse width. In order to realize response times faster than 20 ns, we employed a 50 Ω coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns. |
| Description URI: | http://www.sciencedirect.com/science/journal/09259635 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/8291 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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