THz wave emission from the Cu2O/Cu interface under femtosecond laser irradiation


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/83695

Title:	THz wave emission from the Cu2O/Cu interface under femtosecond laser irradiation
Authors:	Chau, Yuen-Ting Rachel Browse this author
	Huang, Hsin-hui Browse this author
	Nguyen, Mai Thanh Browse this author
	Hatanaka, Koji Browse this author
	Yonezawa, Tetsu Browse this author →KAKEN DB
Keywords:	Terahertz
	Cuprous oxide
	gold
	femtosecond laser
Issue Date:	1-Jan-2021
Publisher:	IOP Publishing
Journal Title:	Applied Physics Express (APEX)
Volume:	14
Issue:	1
Start Page:	012006
Publisher DOI:	10.35848/1882-0786/abd070
Abstract:	Cu or Cu/Au (80 nm thick Cu, 50 nm thick Au) sputtered on Si were kept at 25 degrees C for a week or annealed at a temperature from 80 to 300 degrees C, then tested for THz emission under femtosecond laser irradiation (35 fs-800 nm). THz radiation was detected from samples annealed from 80 to 170 degrees C, which had a Cu2O/Cu interface as the THz source. Cu/Au/Si annealed at 80 degrees C emitted the highest THz radiation because of high laser absorption by the porous Cu2O layer formed at low temperature and the Au film reflected THz radiation and/or increased the laser absorption by the Fabry-Perot effect.
Rights:	©2021 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/83695
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 米澤徹

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