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THz wave emission from the Cu2O/Cu interface under femtosecond laser irradiation

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Title: THz wave emission from the Cu2O/Cu interface under femtosecond laser irradiation
Authors: Chau, Yuen-Ting Rachel Browse this author
Huang, Hsin-hui Browse this author
Nguyen, Mai Thanh Browse this author
Hatanaka, Koji Browse this author
Yonezawa, Tetsu Browse this author →KAKEN DB
Keywords: Terahertz
Cuprous oxide
femtosecond laser
Issue Date: 1-Jan-2021
Publisher: IOP Publishing
Journal Title: Applied Physics Express (APEX)
Volume: 14
Issue: 1
Start Page: 012006
Publisher DOI: 10.35848/1882-0786/abd070
Abstract: Cu or Cu/Au (80 nm thick Cu, 50 nm thick Au) sputtered on Si were kept at 25 degrees C for a week or annealed at a temperature from 80 to 300 degrees C, then tested for THz emission under femtosecond laser irradiation (35 fs-800 nm). THz radiation was detected from samples annealed from 80 to 170 degrees C, which had a Cu2O/Cu interface as the THz source. Cu/Au/Si annealed at 80 degrees C emitted the highest THz radiation because of high laser absorption by the porous Cu2O layer formed at low temperature and the Au film reflected THz radiation and/or increased the laser absorption by the Fabry-Perot effect.
Rights: ©2021 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 米澤 徹

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