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Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8383

Title: Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures
Authors: Hasegawa, Hideki Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Keywords: III-V semiconductors
anodic etching
nanopore
electrodeposition
Schottky barrier
Issue Date: 20-May-2005
Publisher: Elsevier
Journal Title: Electrochimica Acta
Volume: 50
Issue: 15
Start Page: 3015
End Page: 3027
Publisher DOI: 10.1016/j.electacta.2004.11.066
Abstract: This paper reviews recent efforts by authors’ group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>- oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics.
Relation: http://www.sciencedirect.com/science/journal/00134686
Type: article (author version)
URI: http://hdl.handle.net/2115/8383
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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