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Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates

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Title: Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates
Authors: Zhang, X. Q Browse this author
Yao, Z. G Browse this author
Huang, S. H Browse this author
Suemune, I. Browse this author →KAKEN DB
Kumano, H. Browse this author
Issue Date: Mar-2006
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 99
Issue: 6
Start Page: 063709
Publisher DOI: 10.1063/1.2183354
Abstract: High-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three excitonic transitions associated with valence bands A, B, and C are clearly revealed in the reflectance spectrum measured at low temperatures. This result indicates that the ZnO thin films have a perfect wurtzite crystal structure. Biexciton emission is observed in the photoluminescence spectra at low temperatures, from which the biexciton binding energy is estimated to be 14.5 meV, in good agreement with previous results. Exciton-LO (Ex-LO) and exciton-2LO (Ex-2LO) photon emission peaks are observed at low temperature. The energy difference between the Ex-LO and Ex-2LO bands is about 72.5 meV, which coincides with previously reported values of the LO phonon energy for ZnO thin films.
Rights: Copyright © 2006 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/8394
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 熊野 英和

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