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Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels

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Title: Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels
Authors: Kim, Gowoon Browse this author
Feng, Bin Browse this author →KAKEN DB
Ryu, Sangkyun Browse this author
Cho, Hai Jun Browse this author
Jeen, Hyoungjeen Browse this author
Ikuhara, Yuichi Browse this author →KAKEN DB
Ohta, Hiromichi Browse this author →KAKEN DB
Keywords: electrical conductivity
transition-metal oxide
tungsten oxide
anisotropic crystal structure
1D atomic defect tunnel
epitaxial film
pulsed laser deposition
Issue Date: 10-Feb-2021
Publisher: American Chemical Society
Journal Title: ACS applied materials & interfaces
Volume: 13
Issue: 5
Start Page: 6864
End Page: 6869
Publisher DOI: 10.1021/acsami.0c21240
Abstract: Materials having an anisotropic crystal structure often exhibit anisotropy in the electrical conductivity. Compared to complex transition-metal oxides (TMOs), simple TMOs rarely show large anisotropic electrical conductivity due to their simple crystal structure. Here, we focus on the anisotropy in the electrical conductivity of a simple TMO, oxygen-deficient tungsten oxide (WOx) with an anisotropic crystal structure. We fabricated several WOx films by the pulsed laser deposition technique on the lattice-matched (110)-oriented LaAlO3 substrate under a controlled oxygen atmosphere. The crystallographic analyses of the WOx films revealed that highly dense atomic defect tunnels were aligned one-dimensionally (1D) along [001] LaAlO3. The electrical conductivity along the 1D atomic defect tunnels was similar to 5 times larger than that across the tunnels. The present approach, introduction of 1D atomic defect tunnels, might be useful to design simple TMOs exhibiting anisotropic electrical conductivity.
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Materials & Interfaces], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [].
Type: article (author version)
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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