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Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels
Title: | Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels |
Authors: | Kim, Gowoon Browse this author | Feng, Bin Browse this author →KAKEN DB | Ryu, Sangkyun Browse this author | Cho, Hai Jun Browse this author | Jeen, Hyoungjeen Browse this author | Ikuhara, Yuichi Browse this author →KAKEN DB | Ohta, Hiromichi Browse this author →KAKEN DB |
Keywords: | electrical conductivity | anisotropy | transition-metal oxide | tungsten oxide | anisotropic crystal structure | 1D atomic defect tunnel | epitaxial film | pulsed laser deposition |
Issue Date: | 10-Feb-2021 |
Publisher: | American Chemical Society |
Journal Title: | ACS applied materials & interfaces |
Volume: | 13 |
Issue: | 5 |
Start Page: | 6864 |
End Page: | 6869 |
Publisher DOI: | 10.1021/acsami.0c21240 |
Abstract: | Materials having an anisotropic crystal structure often exhibit anisotropy in the electrical conductivity. Compared to complex transition-metal oxides (TMOs), simple TMOs rarely show large anisotropic electrical conductivity due to their simple crystal structure. Here, we focus on the anisotropy in the electrical conductivity of a simple TMO, oxygen-deficient tungsten oxide (WOx) with an anisotropic crystal structure. We fabricated several WOx films by the pulsed laser deposition technique on the lattice-matched (110)-oriented LaAlO3 substrate under a controlled oxygen atmosphere. The crystallographic analyses of the WOx films revealed that highly dense atomic defect tunnels were aligned one-dimensionally (1D) along [001] LaAlO3. The electrical conductivity along the 1D atomic defect tunnels was similar to 5 times larger than that across the tunnels. The present approach, introduction of 1D atomic defect tunnels, might be useful to design simple TMOs exhibiting anisotropic electrical conductivity. |
Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Materials & Interfaces], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-JYIRKE5PEVHPIUTG67NH]. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/84068 |
Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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