Photoluminescence in implanted and doped silicon near room temperature

Matsubara, Ichiro; Sasahara, Shingo; Mishina, Tomobumi et al.

physica status solidi (b), 2006, 243(8), 1893-1897

Permalink : https://hdl.handle.net/2115/10506

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アクセス権	open access
URI	https://hdl.handle.net/2115/10506
タイトル	Photoluminescence in implanted and doped silicon near room temperature
著者	Matsubara, Ichiro ; Sasahara, Shingo ; Mishina, Tomobumi ; Ishibashi, Yasuhiko ; Kobayashi, Toshihiko ; Nakahara, Jun'ichiro
著者名 Matsubara, Ichiro
著者名 Sasahara, Shingo
著者名 Mishina, Tomobumi
著者名 Ishibashi, Yasuhiko
著者名 Kobayashi, Toshihiko
著者名 Nakahara, Jun'ichiro
言語	英語
キーワード	silicon
	photoluminescence
	indirect
	phonon assisted
発行日	2006-05-02
出版者	WILEY-VCH
収録物名	physica status solidi (b)
巻(号)	243(8)
ページ	1893-1897
抄録	Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Published in physica status solidi (b), 243(8), 1893 -1897, 2006.
PISSN	0370-1972
EISSN	1521-3951
関連情報	URI http://www.interscience.wiley.com/
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1002/pssb.200541220