Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates

Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.

Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates

Kasai, S.; Kotani, J.; Hashizume, T. et al.

Journal of Electronic Materials, 2006, 35(4), 568-575

Permalink : https://hdl.handle.net/2115/10522

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アクセス権	open access
URI	https://hdl.handle.net/2115/10522
タイトル	Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates
著者	Kasai, S. ; Kotani, J. ; Hashizume, T. ; Hasegawa, H.
e-Rad_Researcher 30312383 著者名 Kasai, S.
著者名 Kotani, J.
著者名 Hashizume, T.
著者名 Hasegawa, H.
言語	英語
キーワード	GaN
	heterojunction FET (HFET)
	Schottky gate
	gate leakage current
	surface state
	virtual gate
発行日	2006-04
出版者	The Minerals, Metals & Materials Society (TMS)
収録物名	Journal of Electronic Materials
巻(号)	35(4)
ページ	568-575
抄録	Gate control properties together with gate leakage currents in AlGaN/GaN HFETs with nm-scale Schottky gates were investigated focusing on effects of AlGaN surfaces at the gate periphery. Fabricated AlGaN/GaN HFETs showed unexpectedly small gate length (LG)-dependence of transconductance, gm. Comparison of transfer characteristics from theory and experiment, effective LG in the fabricated devices were found much longer than geometrical size in the order of 100 nm, indicating the formation of virtual gates. Detailed analysis of the gate leakage current behaviors based on a thin surface barrier model showed the presence of strong electric field at the gate periphery. Mechanism of the virtual gate formation was discussed based on the obtained nm-scale Schottky gate behaviors.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Copyright (c) 2006 The Minerals, Metals & Materials Society (TMS)
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1007/s11664-006-0101-5