The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots

Zhang, Wei; Uesugi, Katsuhiro; Suemune, Ikuo

Journal of Applied Physics, 2006, 99(10), 103103-1-103103-7

Permalink : https://hdl.handle.net/2115/14412

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アクセス権
open access
URI
https://hdl.handle.net/2115/14412
タイトル
The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots
著者
Zhang, Wei ; Uesugi, Katsuhiro ; Suemune, Ikuo
著者名
Zhang, Wei
著者名
Uesugi, Katsuhiro
e-Rad_Researcher
00112178
著者名
Suemune, Ikuo
言語
英語
発行日
2006-05-15
出版者
American Institute of Physics
収録物名
Journal of Applied Physics
巻(号)
99(10)
ページ
103103-1-103103-7
抄録
Application of InGaAs/GaAsN strain-compensated superlattice (SCSL) to InAs quantum dots (QDs) has been studied with atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and temperature-dependent photoluminescence (PL) measurements. The insertion of a tensile-strained GaAsN layer between InGaAs layers with high In concentrations can compensate the compressive strain in the InGaAs layers and reduce the flattening of QDs during the growth of the successive InGaAs layers. Compared with QDs capped with a single InGaAs layer of a high In concentration, QDs capped with such SCSLs can achieve almost the same redshift of emission wavelength, while the optical property is highly improved. The mechanism responsible for this is discussed based on the AFM, RHEED, and PL measurements.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright © 2006 American Institute of Physics
PISSN
0021-8979
関連情報
URI
http://jap.aip.org/jap/
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2197261