Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure

Kasami, M.; Ogino, T.; Mishina, T.; Yamamoto, S.; Nakahara, J.

Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure

Kasami, M.; Ogino, T.; Mishina, T. et al.

Journal of Luminescence, 2006, 119, 428-432

Permalink : https://hdl.handle.net/2115/14424

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アクセス権	open access
URI	https://hdl.handle.net/2115/14424
タイトル	Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure
著者	Kasami, M. ; Ogino, T. ; Mishina, T. ; Yamamoto, S. ; Nakahara, J.
著者名 Kasami, M.
著者名 Ogino, T.
著者名 Mishina, T.
e-Rad_Researcher 50270781 著者名 Yamamoto, S.
e-Rad_Researcher 30013527 著者名 Nakahara, J. 中原, 純一郎
言語	英語
キーワード	coherent phonon
	photo-excited carrier
	bismuth
	high pressure
	band-overlapping
発行日	2006-07
出版者	Elsevier
収録物名	Journal of Luminescence
巻(号)	119
ページ	428-432
抄録	We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0022-2313
関連情報	URI http://www.sciencedirect.com/science/journal/00222313
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jlumin.2006.01.028