Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructure

Nitta, Junsaku; Lin, Yiping; Akazaki, Tatsushi et al.

Applied Physics Letters, 2003, 83(22), 4565-4567

Permalink : https://hdl.handle.net/2115/14675

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アクセス権	open access
URI	https://hdl.handle.net/2115/14675
タイトル	Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructure
著者	Nitta, Junsaku ; Lin, Yiping ; Akazaki, Tatsushi ; Koga, Takaaki
著者名 Nitta, Junsaku
著者名 Lin, Yiping
著者名 Akazaki, Tatsushi
e-Rad_Researcher 30374614 著者名 Koga, Takaaki
言語	英語
発行日	2003
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(22)
ページ	4565-4567
抄録	The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In0.53Ga0.47As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. ©2003 American Institute of Physics.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
EISSN	0003-6951
関連情報	URI http://apl.aip.org/apl/top.jsp
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1631082