Effect of an $InP/In_{0.53}Ga_{0.47}As$ interface on spin-orbit interaction in $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructures

Lin, Yiping; Koga, Takaaki; Nitta, Junsaku

Effect of an $InP/In_{0.53}Ga_{0.47}As$ interface on spin-orbit interaction in $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructures

Lin, Yiping; Koga, Takaaki; Nitta, Junsaku

Physical Review B, 2005, 71(045328), 045328-1-045328-4

Permalink : https://hdl.handle.net/2115/14678

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アクセス権	open access
URI	https://hdl.handle.net/2115/14678
タイトル	Effect of an $InP/In_{0.53}Ga_{0.47}As$ interface on spin-orbit interaction in $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructures
著者	Lin, Yiping ; Koga, Takaaki ; Nitta, Junsaku
著者名 Lin, Yiping
著者名 Koga, Takaaki
著者名 Nitta, Junsaku
言語	英語
発行日	2005
出版者	American Physical Society
収録物名	Physical Review B
巻(号)	71(045328)
ページ	045328-1-045328-4
抄録	We report the effect of the insertion of an InP/In0.53Ga47As Interface on the Rashba spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In0.53Ga47As well, the overall values of the spin-orbit coupling constant turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the k·p theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2005 American Physical Society
PISSN	0163-1829
EISSN	1095-3795
関連情報	URI http://www.aps.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1103/PhysRevB.71.045328