Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier

Marukame, T.; Ishikawa, T.; Sekine, W.; Matsuda, K.; Uemura, T.; Yamamoto, M.

Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier

Marukame, T.; Ishikawa, T.; Sekine, W. et al.

IEEE Transactions on Magnetics, 2006, 42(10), 2652-2654

Permalink : https://hdl.handle.net/2115/14894

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アクセス権	open access
URI	https://hdl.handle.net/2115/14894
タイトル	Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier
著者	Marukame, T. ; Ishikawa, T. ; Sekine, W. ; Matsuda, K. ; Uemura, T. ; Yamamoto, M.
著者名 Marukame, T.
著者名 Ishikawa, T.
著者名 Sekine, W.
e-Rad_Researcher 80360931 著者名 Matsuda, K.
e-Rad_Researcher 20344476 著者名 Uemura, T.
e-Rad_Researcher 10322835 著者名 Yamamoto, M.
言語	英語
キーワード	Co-based full Heusler alloy
	half-metallic ferromagnet
	magnetic tunnel junction
	tunnel magnetoresistance
発行日	2006-10
出版者	IEEE
収録物名	IEEE Transactions on Magnetics
巻(号)	42(10)
ページ	2652-2654
抄録	Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios. This adds to the promise of the fully epitaxial MTJ as a key device structure for utilizing the intrinsically high spin polarizations of Co-based full-Heusler alloy thin films.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
PISSN	0018-9464
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1109/TMAG.2006.878859