Microstructures of SiO2 scales formed on MoSi2

Kurokawa, Kazuya; Goto, Daichi; Kuchino, Jyunichi et al.

Materials Science Forum, 2006, 522(523), 595-602

Permalink : https://hdl.handle.net/2115/15823

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アクセス権
open access
URI
https://hdl.handle.net/2115/15823
タイトル
Microstructures of SiO2 scales formed on MoSi2
著者
Kurokawa, Kazuya ; Goto, Daichi ; Kuchino, Jyunichi ; Yamauchi, Akira ; Shibayama, Tamaki ; Takahashi, Heishichiro
e-Rad_Researcher
00161779
著者名
Kurokawa, Kazuya
著者名
Goto, Daichi
著者名
Kuchino, Jyunichi
著者名
Yamauchi, Akira
著者名
Shibayama, Tamaki
著者名
Takahashi, Heishichiro
言語
英語
キーワード
oxidation
MoSi2
transmission electron microscopy (TEM)
microstructure of oxide scale
発行日
2006
出版者
Trans Tech Publications
収録物名
Materials Science Forum
巻(号)
522(523)
ページ
595-602
抄録
The microstructures of oxide scales formed on MoSi2 at medium-high temperatures in air were observed by TEM. Based on the observation, relationships between oxidation temperature and formation of MoO3 and crystallization of amorphous SiO2 scales were investigated. At 1273 K and 1373 K, the oxide scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 particles. The oxide scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the oxide scale formed at 1773 K appreciably increased due to crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiO2 scale.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
the original is available online at www.scientific.net. High-Temperature Oxidation and Corrosion 2005
PISSN
0255-5476