Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier

Ishikawa, T.; Marukame, T.; Kijima, H.; Matsuda, K.-I.; Uemura, T.; Arita, M.; Yamamoto, M.

Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier

Ishikawa, T.; Marukame, T.; Kijima, H. et al.

Applied Physics Letters, 2006, 89(19), 192505

Permalink : https://hdl.handle.net/2115/16890

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アクセス権	open access
URI	https://hdl.handle.net/2115/16890
タイトル	Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier
著者	Ishikawa, T. ; Marukame, T. ; Kijima, H. ; Matsuda, K.-I. ; Uemura, T. ; Arita, M. ; Yamamoto, M.
著者名 Ishikawa, T.
著者名 Marukame, T.
著者名 Kijima, H.
e-Rad_Researcher 80360931 著者名 Matsuda, K.-I.
e-Rad_Researcher 20344476 著者名 Uemura, T.
e-Rad_Researcher 20222755 著者名 Arita, M.
e-Rad_Researcher 10322835 著者名 Yamamoto, M.
言語	英語
発行日	2006-11-06
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	89(19)
ページ	192505
抄録	Fully epitaxial, exchange-biased magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. The microfabricated CMS/MgO/Co50Fe50 MTJs exhibited relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. The bias voltage dependence of differential conductance (dI/dV) for the parallel and antiparallel magnetization configurations suggested the existence of a basic energy gap structure for the minority-spin band of the CMS electrode with an energy difference of about 0.4 eV between the bottom of the vacant minority-spin conduction band and the Fermi level. ©2006 American Institute of Physics
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2006 American Institute of Physics
PISSN	0003-6951
EISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2378397