Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Otsuji, Taiichi; Meziani, Yahya Moubarak; Hanabe, Mitsuhiro et al.

Applied Physics Letters, 2006, 89(26), 263502

Permalink : https://hdl.handle.net/2115/17197

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アクセス権	open access
URI	https://hdl.handle.net/2115/17197
タイトル	Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
著者	Otsuji, Taiichi ; Meziani, Yahya Moubarak ; Hanabe, Mitsuhiro ; Ishibashi, Takuma ; Uno, Tomohiro
著者名 Otsuji, Taiichi
著者名 Meziani, Yahya Moubarak
著者名 Hanabe, Mitsuhiro
著者名 Ishibashi, Takuma
著者名 Uno, Tomohiro
言語	英語
発行日	2006-12-25
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	89(26)
ページ	263502
抄録	A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature. ©2006 American Institute of Physics
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2006 American Institute of Physics
PISSN	0003-6951
EISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2410228