Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Nakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta et al.

Applied Physics Letters, 2007, 90(10), 102104

Permalink : https://hdl.handle.net/2115/20120

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アクセス権	open access
URI	https://hdl.handle.net/2115/20120
タイトル	Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates
著者	Nakamura, Tatsuya ; Kasai, Seiya ; Shiratori, Yuta ; Hashizume, Tamotsu
著者名 Nakamura, Tatsuya
e-Rad_Researcher 30312383 著者名 Kasai, Seiya
著者名 Shiratori, Yuta
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
発行日	2007-03
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	90(10)
ページ	102104
記述	Copyright © 2007 American Institute of Physics
抄録	A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates (WPGs), which control left and right branches independently, are fabricated utilizing AlGaAs/GaAs etched nanowires and characterized experimentally. Fabricated device exhibits clear nonlinear characteristics of output voltage at the center terminal by applying voltages to left and right terminals in push-pull fashion. Applying asymmetric gate voltages to left and right WPGs provides clear asymmetry in the output voltage. The nonlinearity in the low voltage regions is greatly enhanced by squeezing both left and right branches using WPGs.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
PISSN	0003-6951
EISSN	0003-6951
関連情報	URI http://apl.aip.org/apl/top.jsp
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2711374