Atomic imaging of an InSe single-crystal surface with atomic force microscope

Uosaki, Kohei; Koinuma, Michio

Journal of Applied Physics, 1993, 74(3), 1675-1678

Permalink : https://hdl.handle.net/2115/20579

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アクセス権	open access
URI	https://hdl.handle.net/2115/20579
タイトル	Atomic imaging of an InSe single-crystal surface with atomic force microscope
著者	著者名 Uosaki, Kohei
著者	著者名 Koinuma, Michio
言語	英語
発行日	1993-08-01
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	74(3)
ページ	1675-1678
抄録	The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged. Journal of Applied Physics is copyrighted by The American Institute of Physics.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 1993 American Institute of Physics
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.354820