High quality Fe3-δO4/InAs hybrid structure for electrical spin injection

Ferhat, Marhoun; Yoh, Kanji

Applied Physics Letters, 2007, 90(11), 112501

Permalink : https://hdl.handle.net/2115/22531

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アクセス権	open access
URI	https://hdl.handle.net/2115/22531
タイトル	High quality Fe3-δO4/InAs hybrid structure for electrical spin injection
著者	著者名 Ferhat, Marhoun
著者	e-Rad_Researcher 60220539 著者名 Yoh, Kanji
言語	英語
発行日	2007-03-12
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	90(11)
ページ	112501
抄録	Single crystalline Fe3−O4 (00.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that (001) Fe3−O4 can be grown under step-flow-growth mode with a characteristic (×)R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe3O4 to -Fe2O3. Measurements with a superconducting quantum interference device magnetometer at 300 K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications. ©2007 American Institute of Physics
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2007 American Institute of Physics
PISSN	0003-6951
EISSN	0003-6951
関連情報	URI http://apl.aip.org/apl/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2713784